From the systems side, limitations in siliconbased device technology, such as
switching speed and power dissipation, seem unavoidable. Thus, there is a
strong demand to develop high-speed analog and digital systems based on
Author: Takahiko Misugi
Publisher: Springer Science & Business Media
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
1 Superconductive circuit technology is being developed to higher integration
and speed , resulting in smaller linewidths . ... 1993 Josephson digital devices
Compound and Josephson High - Speed Devices , ed T Isugi and A Shibatomi (
Author: David A. Cardwell
Publisher: CRC Press
With the advent of High Temperature Superconductivity and the increasing reliability of fabrication techniques, superconductor technology has moved firmly into the mainstream of academic and industrial research. There is currently no single source of practical information giving guidance on which technique to use for any particular category of superconductor. An increasing number of materials scientists and electrical engineers require easy access to practical information, sensible advice and guidance on 'best-practice' and reliable, proven fabrication and characterisation techniques.The Handbook will be the definitive collection of material describing techniques for the fabrication and analysis of superconducting materials. In addition to the descriptions of techniques, authoritative discussions written by leading researchers will give guidance on the most appropriate technique for a particular situation.Characterisation and measurement techniques will form an important part of the Handbook, providing researchers with a standard reference for experimental techniques. The tutorial style description of these techniques makes the Handbook particularly suitable for use by graduate students.The Handbook will be supported by a comprehensive web site which will be updated with new data as it emerges.The Handbook has six main sections: -- Fundamentals of Superconductivity - characteristic properties, elementary theory, critical current of type II superconductors-- Processing - bulk materials, wires and tapes, thick and think films, contact techniques-- Characterisation Techniques - structure/microstructure, measurement and interpretation of electromagnetic properties,measurement of physics properties-- Materials - characteristic properties of low and high Tc materials-- Applications - high current applications, trapped flux devices, high frequency devices, josephson junction devic
Physics and Fabrication Technologies Series Editors: Ivor Brodie and Arden Sher
SRI International Menlo Park, California Recent volumes in the series:
COMPOUND AND JOSEPHSON HIGH-SPEED DEVICES Edited by Takahiko
Misugi and ...
Author: J.S. Yuan
Publisher: Springer Science & Business Media
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
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